| 摘要 |
PURPOSE: A method of fabricating a ferroelectric memory device is provided to be capable of effectively preventing titanium from being diffused from a titanium glue layer to a ferroelectric film. CONSTITUTION: A method of fabricating a ferroelectric memory device comprises forming an interlayer insulation film(27) over a semiconductor substrate(21) on which a transistor having a gate oxide film(23), a gate electrode(24), a junction region(25) and a bit line are formed. A ferroelectric capacitor is formed which consists of a lower electrode(28), a ferroelectric film(29) and an upper electrode(30), and a capacitor level dielectric film(31) and an oxide film(32) are formed on a resultant structure. A firs contact hole(C1) is formed by selectively removing the oxide film(32) and the capacitor level dielectric film(31) so as to expose the upper electrode(30), and a recovery annealing is carried out. A first TiN diffusion preventing film(33) is formed on a resultant structure, and is selectively etched so as to remain in the first contact hole(C1) and around the contact hole(C1). A second contact hole(C2) is formed by selectively etching the oxide film(32), the capacitor level dielectric film(31) and the interlayer insulation film(27) so as to expose the junction region(25) of the transistor.
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