| 摘要 |
PURPOSE: A method for manufacturing a dynamic random access memory(DRAM) is provided to improve a dimensional allowance of a process and an integration degree of a memory cell, by patterning a plug used as a bit line connection part and a capacitor connection part in a self-alignment method. CONSTITUTION: A device formation region surrounded by an isolation insulating layer is formed on a semiconductor substrate. Word lines(117b,117c) are disposed in a column direction and are separated an interval of lambda 2 from each other on the device formation region. Simultaneously, word lines(117d,117e) are disposed in a column direction and are separated an interval of lambda 1 from each other on the isolation insulating layer adjacent to the device formation region. A spacer of a first insulating layer having a width of omega is formed on sidewalls of the word lines(117b,117c,117d,117e). The word lines(117d,117e) separated an interval of lambda 1 from each other are filled up with the spacer. A source/drain region(146) is formed on both sides of the word lines(117b,117c) to form a transfer transistor. A plug of a second conductive layer electrically connected to the source/drain region fills up the space of the device formation region surrounded by the word lines and insulating layer by a self-alignment method. A bit line of a third conductive layer is electrically connected to the plug disposed among the transfer transistors, arranged in a row direction. A capacitor is electrically connected to the plug disposed between the transfer transistor and the word lines(117d,117e).
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