METHOD FOR FORMING CAPACITOR ELECTRODE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a capacitor electrode of a semiconductor device is provided to obtain a high capacitance by maximizing a surface area of a capacitor. CONSTITUTION: The first and the second insulating layers(31,32) are deposited sequentially on a substrate. A polysilicon layer(33), the third insulating layer, and a polysilicon layer(35) are deposited sequentially thereon. A photoresist pattern is formed by applying and etching the photoresist on the polysilicon layer(35). A sidewall spacer is formed at a side of the third insulating layer(34) by depositing and etching a polysilicon thereon. A polysilicon thin film is deposited on the whole surface. A photoresist pattern is defined by a photo mask process. The first node pattern is defined by using the second insulating layer(32) as an etching barrier. A sidewall polysilicon spacer is formed on a side of the third insulating layer(34) and each side of node electrodes by depositing and etching back a polysilicon on the whole surface. The second node pattern is defined by using the second insulating layer(32) as the etching barrier. The third insulating layer is removed. A dielectric film(310) is deposited on the whole surface. A polysilicon(311) for plate electrode is deposited thereon.