METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to improve a high temperature stability of silicide and reliability of a gate insulating layer, by using polysilicon of a columnar structure to increase a gate doping efficiency and to inject nitrogen ions. CONSTITUTION: Polysilicon having a columnar structure is formed by intervening a gate insulating layer(22) on a semiconductor substrate(21). The polysilicon and gate insulating layer are selectively eliminated to form a gate electrode(23). A sidewall spacer is formed on both side surfaces of the gate electrode. Gate doping and nitrogen ions are injected into the gate electrode. A cobalt layer is formed on the entire semiconductor substrate including the gate electrode. A silicide layer is formed on a boundary surface of the cobalt layer, gate electrode and semiconductor substrate. The cobalt layer not reacting with the gate electrode and semiconductor substrate is eliminated.