| 摘要 |
PURPOSE: A semiconductor device fabricating method is provided to be capable of improving the step coverage characteristics at a metal wiring process by using a second semiconductor layer as a contact plug for connecting an emitter region, a base region and a collector region to corresponding electrodes. CONSTITUTION: A semiconductor device fabricating method comprises sequentially forming a first insulation film, a first semiconductor layer and a second insulation film on a substrate(1). A second insulation film pattern is formed by etching the second insulation film(7) until the first semiconductor layer is exposed. A first semiconductor layer pattern and a first insulation film pattern(3a) are formed by etching the exposed semiconductor layer and the insulation film until a portion of the substrate(1) is exposed, so that first and second opening parts are formed which penetrate the second insulation film, the first semiconductor layer and the first insulation layer. A first semiconductor pattern and a second insulation film pattern are formed by etching the patterns so that a portion on the first insulation film pattern(3a) is exposed. A first N-epitaxial layer(11) is selectively grown on the substrate(1) corresponding to an exposed N+ buried diffusion region(2). After removing a third insulation film, a second N-epitaxial layer(12) is selectively grown so as to be connected to the first semiconductor layer pattern. After removing the second insulation film pattern, a fourth insulation film is formed on an entire surface and an N+ collector region(14) and P- active base region(15) are formed. After removing the fourth insulation film, a second semiconductor layer(16) and a fifth insulation film are formed. A fifth insulation film pattern(19a) is formed by etching the fifth insulation film so that a portion on the second semiconductor layer(16) is exposed.
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