METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing semiconductor device is provided to create oxidation layer instead of forming halogen ion implantation layer. CONSTITUTION: A device separation area(209) is made on a semiconductor substrate(200). Between the device separation areas, a gate oxidation layer(201) and a gate electrode(202) is build. On the gate electrode(202), a protection film of gate electrode(202). The semiconductor substrate between the side wall spacer(204) and the device separation area(209) is etched and a trench(206) is produced. An oxidation layer is covered the semiconductor substrate(200) using CVD(Chemical Vapor Deposition). By etching the isolation layer anisotropically, a spacer(208) is generated for preventing punch-through. The trench(206) is filled up with a conductive material(208). The conductive material works as a source and a drain of transistor.