Improved integrated-circuit isolation structure and method for forming the same

摘要

An IC isolation structure includes a recess disposed in a conductive layer having a surface portion. The recess has a side wall adjacent to the surface portion, and the isolation structure also includes an insulator disposed in the recess and overlapping the surface portion. Thus, if a transistor is disposed in the conductive layer adjacent to the recess side wall, the overlapping portion of the insulator increases the distance between the upper recess corner and the gate electrode. This increased distance reduces hump effects to tolerable levels. <IMAGE>