Method for anisotropic etching of copper thin films with a beta-diketone, a beta-ketoimine, or a breakdown product thereof

摘要

This invention provides a method for anisotropically etching copper thin films for nanofabrication. Surface modifications in a direction perpendicular to the surface of the copper thin film facilitates anisotropic etching with a beta -diketone, a beta -ketoimine or a breakdown product thereof, such as 1,1,1,5,5,5-hexafluoro-2,5-pentanedione (H<+>hfac). The surface modification described can be anisotropic copper oxidation by exposure to a plasma or a directed ion beam. Ion implantation can be used to introduce the oxygen into the region where copper etching is desired or to damage the etch region enough to promote enhanced oxidation in that region. Masking schemes are also disclosed for use with ion implantation. <IMAGE>