METHOD FOR CONTROLLING DEFECT IN BOUNDARY BETWEEN STORAGE ELECTRODE AND FERROELECTRIC THIN FILM USING TWO-STEP EVAPORATION METHOD

摘要

PURPOSE: A method for controlling a defect using a two-step evaporation method is provided to improve reliability, by eliminating or controlling oxygen vacancy or an oxygen-related defect existing on a boundary surface between a storage electrode and a ferroelectric thin film. CONSTITUTION: A ferroelectric thin film having a predetermined thickness is grown on a storage electrode. The ferroelectric thin film is processed with oxygen plasma to reduce an oxygen-related defect existing on a boundary surface between the storage electrode and the ferroelectric thin film. Another ferroelectric thin film of a desired thickness is evaporated on the ferroelectric thin film of which the oxygen-related defect is reduced.