METHOD FOR MANUFACTURING FINE PATTERN OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a fine pattern of a semiconductor device is provided to prevent a pattern defect caused by amine, by increasing the temperature of a photoresist layer higher than 30°C while the photoresist layer is transferred from a storage bath to an injection nozzle, so that a good pattern is formed even if a post exposure bake is delayed. CONSTITUTION: A semiconductor substrate is prepared. The semiconductor substrate is preprocessed. Photoresist is applied on the semiconductor substrate while a storage temperature is increased to 30-80°C. An exposure process is performed regarding the photoresist layer. A post exposure bake is performed regarding the photoresist layer. The photoresist layer is developed to form a photoresist layer pattern.