| 摘要 |
PURPOSE: Is provided an elimination method of impurity according to the manufacturing process of mask, which can enhance the elimination ability without inducing metal pollution. CONSTITUTION: The elimination method of impurity generated at the manufacturing process of mask is characterized by adding HF in solution mixed as ratio of H2SO4:H2O2=4:1, wherein H2SO4 is kept 97% concentration, H2O2 is kept 30% concentration, and HF is kept 15 PPM. The method can prevent a lowering of beam transmissivity according to Ga strain. |
