| 摘要 |
PURPOSE: A method for manufacturing a semiconductor memory device is provided to improve the step coverage between a cell region and a peripheral region, by forming a semiconductor dynamic random access memory(DRAM) device on a silicon-on-insulator(SOI) substrate, and by forming a storage node capacitor between a device layer and a buried insulating layer. CONSTITUTION: A buried insulating layer(11) is formed on a silicon wafer(10) for handling. A conductive layer(12) is formed on the buried insulating layer. A plate electrode(14) in which a pair of spacers have a symmetrical structure is formed in a predetermined portion on the conductive layer. A dielectric layer(15) is formed on the plate electrode and the conductive layer. A storage node electrode(16) is formed on the dielectric layer. A planarization layer(17) is formed to sufficiently bury the storage node electrode. The first hole is to expose a predetermined portion of the storage node electrode. A connection node(18) is formed on the planarization layer including the first hole to be in contact with the exposed storage node electrode. A device layer(19) is formed on the entire structure. A gate electrode(21) is formed in a predetermined portion of the device layer. A source/drain region(22,23) is formed in the device layer at both sides of the gate electrode, wherein the source region is in contact with the connection node.
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