发明名称 METHOD FOR THE PRODUCTION OF A MONOCRYSTALLINE LAYER ON A SUBSTRATE WITH A NON-ADAPTED LATTICE AND COMPONENT CONTAINING ONE OR SEVERAL SUCH LAYERS
摘要 The invention relates to a method for the production of a monocrystalline layer on a substrate with a non-adapted lattice. To this end, a monocrystalline substrate with a buried amply defective layer and a monocrystalline layer produce thereon are used. The buried amply defective layer can be produced by hydrogen implantation.
申请公布号 EP1051740(A1) 申请公布日期 2000.11.15
申请号 EP19990907288 申请日期 1999.01.27
申请人 FORSCHUNGSZENTRUM JUELICH GMBH 发明人 MANTL, SIEGFRIED;HOLLAENDER, BERNHARD;LIEDTKE, RALF
分类号 C30B23/02;H01L21/20;H01L21/265 主分类号 C30B23/02
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