| 摘要 |
<p>In order that the tradeoff between on state voltage and switching-off loss can be improved and a PT type IGBT element can be formed even with the use of a single crystal wafer, in an insulating gate bipolar transistor suitable for power switching element, there is provided a semiconductor device which comprises a first region of a first conductivity type, a second region of a second conductivity type disposed on the first region, a third region of the first conductivity type in the second region, a fourth region of the second conductivity type in the third region, and a low resistance region that prevents the extension of a depletion layer, disposed on the first region side in the second region. This semiconductor device is characterized in that the low resistance region is formed by implanting non-impurity ion into a region where the low resistance region is desired, to obtain a recombination center defect region, and performing a heat treatment of the defect region, in order to obtain a low resistance. <IMAGE></p> |
