METHOD FOR ETCHING OF ALUMINUM LAYER USING HIGH DENSITY OF PLASMA ETCHING EQUIPMENT

摘要

PURPOSE: A method for etching of aluminum layer using high density of plasma etching equipment is provided to restrain of etching leftovers, and to achieve high selective etching ratio of interlayer dielectrics. CONSTITUTION: A cathode(210) is located on the bottom of a high density plasma etching equipment(200). A semiconductor wafer(220) is loaded on the cathode(210). The cathode(210) is connected with an RF(Radio Frequency) power(230). Under the top of the etching equipment(200), an anode(240) is arranged and connected to an upper RF power(250). Through the anode(240), a reaction gas such as Cl2 and BCl2 and an additional gas like N2 are supplied into the etching equipment(200). On the surface of the surface of the semiconductor wafer, high density plasma(260) is created and the supplied gas is ionized. The aluminum layer on the wafer is etched by the ionized gas ion.