SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to prevent a characteristic of a transistor from being changed, by omitting the process to evaporate a passivation layer entailing a high temperature thermal process after forming an internal circuit transistor and an electrostatic discharge(ESD) transistor. CONSTITUTION: A semiconductor substrate(121) of a first conductivity type is prepared which has an internal circuit device formation region and an electrostatic discharge(ESD) protection device formation region. A first impurity layer of a second conductivity type is formed in the ESD protection device formation region of the semiconductor device. Respective gate electrodes(124a,124b) are formed on the semiconductor substrate of the internal circuit device formation region and electrostatic discharge(ESD) protection device formation region while a dummy gate electrode(124c) is formed on the first impurity layer. A second impurity layer of the second conductivity type is formed in the semiconductor substrate on both sides of the gate electrode and dummy gate electrode. A silicide layer(128) is formed on the gate electrode, dummy gate electrode and second impurity layer.