METHOD OF FORMING A CAPACITOR OF A SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: A capacitor forming method of a semiconductor memory device is provided to prevent a silicon cluster of connecting adjacent storage electrodes by flowing hydrogen gas on an entire surface of a semiconductor substrate together with source gas injection. CONSTITUTION: A capacitor forming method of a semiconductor memory device comprises forming an interlayer insulation film(100) over a P-type semiconductor substrate, on which an access transistor is formed. An amorphous silicon pattern(102) for a storage electrode, which is connected to a diffusion region of the access transistor via a contact plug, is formed on an entire surface of a resultant structure. Hydrogen gas(104) flows on an entire surface of a resultant structure.