发明名称 METHOD FOR PRODUCING INTEGRATED CIRCUITS
摘要 <p>The invention relates to a method for producing integrated circuits and components. Previously, substrates were initially made thinner or thin layers were produced according to various methods in order to produce integrated circuits on thin semiconductor layers. Integrated circuits were subsequently produced in a separate process. The inventive method is designed to produce integrated circuits on thin semiconductor layers using traditional wafers as a starting material. A step modifying the quality of the substrate in a layer underneath the components and a step separating the layer containing said components from the rest of the substrate are added at an appropriate stage to known steps in the production of integrated circuits on a substrate. The method can be used especially in silicon CMOS technology. It enables the substrate that is used as a starting material to be re-used. The inventive method also enables individual chips to be detached from the wafer.</p>
申请公布号 EP1051747(A1) 申请公布日期 2000.11.15
申请号 EP19980965667 申请日期 1998.11.11
申请人 FRAUNHOFER-GESELLSCHAFT ZUR FOERDERUNG DER 发明人 HABERGER, KARL;PLETTNER, ANDREAS
分类号 B81C99/00;H01L21/336;H01L21/762;H01L21/768;H01L21/78;(IPC1-7):H01L21/78;H01L21/82 主分类号 B81C99/00
代理机构 代理人
主权项
地址