发明名称 VOLTAGE BOOSTING CIRCUIT OF SEMICONDUCTOR DEVICE
摘要 PURPOSE: A voltage boosting circuit of a semiconductor device is provided to generates a voltage over a power-supply voltage, and prevents a sudden increasing of a signal line's potential. CONSTITUTION: A voltage boosting circuit includes a voltage detector for detecting a potential of a boosted signal line in active mode. The voltage detector includes a compensation current provider. The compensation current provider is connected to an input terminal of a discriminator having a logic threshold voltage level, and is connected to a power-supply voltage. If an input potential of the discriminator becomes lowered because of a power-supply voltage variation, the compensation current provider inputs a compensation current to an input terminal of the discriminator. The compensation current is proportional to a power-supply voltage variation. Accordingly, a potential of the signal line driven by the voltage boosting circuit is not suddenly increased.
申请公布号 KR20000067347(A) 申请公布日期 2000.11.15
申请号 KR19990015080 申请日期 1999.04.27
申请人 SAMSUNG ELECTRONICS CO, LTD. 发明人 JUN, BAEK YEONG
分类号 H01L27/04;G05F1/10;G05F3/24;G11C5/14;G11C11/407;H01L21/822;H03K5/08;(IPC1-7):G05F1/10 主分类号 H01L27/04
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