| 摘要 |
PURPOSE: A device for plasma etching is provided to control a coefficient of friction between a coil and an RF(Radio Frequency) power. CONSTITUTION: A device for plasma etching is comprised of plasma etching chamber, a first RF(Radio Frequency) power supplier(14), motor(20), and a second RF power supplier. The first RF power supplier(14) supplies RF power of 2.0 MHz to a first electrode(12) and generates plasma in a chamber(10). The second RF power supplier(16) gives RF power of 13.56 MHz to a second electrode(18) in the chamber(10). The motor(20) connects the first RF power supplier(14) and a coil(12). Depending on a coefficient of friction, the plasma density is changed. By changing the coefficient of friction, an etching process ability can be controlled.
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