| 摘要 |
PURPOSE: A semiconductor memory device is provided to reduce current consumption at standby state by making the circuit enable in response to the main sense amplifier enable signal. CONSTITUTION: The semiconductor memory device includes several devices. In a main data line pairs clamp circuit(30-1), NMOS transistors(N15,N16) are connected between a source and a ground voltage of NMOS transistors(N12,N14), respectively and a main sense amplifier enable signal(MSAEN) is applied to those gates. The main data line pairs clamp circuit(30-1) operates only when the main sense amplifier enable signal(MSAEN) is enabled. That is, the NMOS transistors(N15,N16) are turned on and therefore main data line pairs(MDL1,MDLB1) are maintained as VCC-Vbe level. The main sense amplifier enable signal(MSAEN) is an enable signal when performing a read operation, in the read operation, makes the main line pairs(MDL1,MDLB1) clamp, whereas the main data line pairs clamp circuit(30-1) does not operated in the standby operation.
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