发明名称 FUSE ELEMENT STRUCTURE OF SEMICONDUCTOR MEMORY
摘要 PURPOSE: A fuse element is provided to be adapted to obtain a process margin and make a design area to be minimal by forming the fuse element in a multi-layer structure. CONSTITUTION: A fuse element comprises a first insulating film formed on a wafer, a plural of first fuse element patterned on the upper portion of the first insulating film at a distance, a second insulating film formed on the upper portion of the first insulating film including the first fuse element, and a plural of second fuse element patterned on the upper portion of the second insulating film on the area spaced away between the first fuse elements. Such a fuse element is applied to word and data lines of memory, respectively.
申请公布号 KR20000067305(A) 申请公布日期 2000.11.15
申请号 KR19990015014 申请日期 1999.04.27
申请人 HYUNDAI MICRO ELECTRONICS CO.,LTD. 发明人 HUH, IK;HWANG, YEON HO
分类号 H01L21/82;(IPC1-7):H01L21/82 主分类号 H01L21/82
代理机构 代理人
主权项
地址