发明名称 |
TFT SUBSTRATE FOR LCD AND FABRICATION METHOD OF THE SAME |
摘要 |
PURPOSE: A TFT substrate for LCD and a fabrication method of the same are provided to remove afterimage by decreasing DC components and simplify fabrication process by decreasing masks. CONSTITUTION: A fabrication method of TFT substrate for LCD comprises steps of: forming gate lines and gate electrodes connected to the gate lines on an insulation substrate; forming a gate insulation film covering the gate lines; forming semiconductor patterns on the gate insulation film; forming a data wiring comprising source and drain electrodes and data lines connected to the source electrodes; depositing a protect film having a first contact hole exposing the drain electrodes and covering the data wiring; and forming pixel electrodes connected to the drain electrodes through the first contact hole.
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申请公布号 |
KR20000067259(A) |
申请公布日期 |
2000.11.15 |
申请号 |
KR19990014898 |
申请日期 |
1999.04.26 |
申请人 |
SAMSUNG ELECTRONICS CO, LTD. |
发明人 |
KIM, DONG GYU |
分类号 |
G02F1/136;(IPC1-7):G02F1/136 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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