METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to prevent a damage to a silicide layer and a substrate by forming an insulating layer for forming a sidewall and a contact, simultaneously. CONSTITUTION: A gate electrode is formed in an active region formed on a semiconductor substrate(21), the active region being defined by an isolation layer(23). A first insulating layer is formed on the entire surface of the semiconductor substrate including the gate electrode and isolation layer. The first insulating layer is selectively eliminated to form a passivation layer on a sidewall(28) of both side surfaces of the gate electrode and on the isolation layer. A monocrystal silicon layer(30) is formed by a selective epitaxial growth(SEG) process on the entire surface of the semiconductor substrate except the sidewall and passivation layer. A metal layer having a high melting point is evaporated on the entire surface and is thermally processed to form a silicide layer on an upper surface of the gate electrode and the monocrystal silicon layer. A second insulating layer(32) is evaporated and selectively etched to form a contact hole(34) so that the silicide layer on the gate electrode and a part of the passivation layer are exposed.