METHOD FOR MANUFACTURING CONTACT OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a contact of a semiconductor device is provided to greatly reduce an overall manufacturing time by simplifying the process for forming contacts of a word line and a bit line. CONSTITUTION: A gate polysilicon layer(3), a tungsten silicide layer(4), a low temperature oxidation layer(5) and an insulating layer(7) are sequentially stacked on a substrate(1). The insulating layer is patterned to form a first contact hole on the insulating layer corresponding to the gate polysilicon layer. The low temperature oxidation layer is patterned to form a second contact hole connected to the first contact hole on the low temperature oxidation layer. After the tungsten silicide layer is patterned and a part of the tungsten silicide layer corresponding to the gate polysilicon layer is eliminated, the inside of the first and second contact holes is cleaned in the same equipment. A conductive polysilicon layer is formed on the insulating layer to fill up the inside of the first and second contact holes.