| 摘要 |
PURPOSE: A method for manufacturing a gate electrode of a semiconductor device is provided to prevent a high melting point metal thin film exposed to the sidewall of the gate electrode from being oxidized, and to maintain an electrical characteristic by having the metal thin film surrounded by a silicide layer having a good conductive characteristic. CONSTITUTION: A gate insulating layer(12), a doped polysilicon layer(13), a diffusion blocking layer(14), a high melting point metal thin film(15) and a diffused reflection blocking oxidation layer are sequentially evaporated on a semiconductor substrate(11). A predetermined part of the doped polysilicon layer, diffusion blocking layer, high melting point metal thin film and diffused reflection blocking oxidation layer is patterned to form a gate electrode. A first spacer composed of a silicon layer and a polysilicon layer is formed on the sidewall of the gate electrode. The resultant structure on the substrate is thermally processed to thermally oxidize the silicon layer on the sidewalls of the doped polysilicon layer, diffusion blocking layer and diffused reflection blocking oxidation layer while transforming the silicon layer on the sidewall of the high melting point metal thin film into a silicide layer(20). Low density impurity ions for a source and a drain are injected into the exposed substrate. A second spacer composed of a second silicon nitride layer is formed on both sides of the first silicon nitride layer. High density impurity ions for the source/drain are injected into the exposed substrate.
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