发明名称 |
Deposition of an electrically insulating thin film with a low dielectric constant |
摘要 |
<p>This invention pertains to a method for forming thin films on substrates wherein the films are produced by applying a solution of an electrically insulating, heat-curing resin onto the substrate, evaporating the solvent and then exposing the resin to high energy radiation to cure the resin. The resin solution contains a substance selected from solvents and gas generating additives that causes dedensification of the film during cure of the resin. This results in a film having a dielectric constant of below 2.7. This invention also pertains to a semiconductor device having an interconnect structure comprising at least one electrically conductive layer with an interposed insulating layer having a dielectric constant of less than 2.7 wherein the insulating layer is produced by the method of this invention. <IMAGE></p> |
申请公布号 |
EP0881668(A3) |
申请公布日期 |
2000.11.15 |
申请号 |
EP19980109594 |
申请日期 |
1998.05.27 |
申请人 |
DOW CORNING TORAY SILICONE COMPANY, LTD. |
发明人 |
KOBAYASHI, AKIHIKO;MINE, KATSUTOSHI;NAKAMURA, TAKASHI;SASAKI, MOTOSHI;SAWA, KIYOTAKA |
分类号 |
H01L21/312;H01L21/314;H01L21/316;H01L21/768;H01L23/532;(IPC1-7):H01L21/312 |
主分类号 |
H01L21/312 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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