发明名称 CHAMBER FOR TREATING SEMICONDUCTOR IMPROVED IN LOWER STRUCTURE
摘要 PURPOSE: A chamber for treating semiconductor is provided to get a uniform result about treating wafer by arraying a wafer on a chuck exactly and to discharge pollutant on the corner of an edge ring easily. CONSTITUTION: In a chamber for treating semiconductor, an internal upper corner of an edge ring(3') faced with a chuck(1) is treated roundly or is inclined. Even if wafer(11) weren't arrayed on the chuck exactly, a corner of wafer wouldn't be hung over the edge ring and a wafer would slide down according to a corner of the edge ring treated roundly. Consequently, the wafer is placed on the chuck(1) precisely. Pollutant on the corner of edge ring or between the chuck and the edge ring is inhaled into outlet(9) easily by pumping of an exhaust pump. In case of turning the edge ring during the process, the pollutant also is discharged to the outside by only centrifugal force.
申请公布号 KR20000065606(A) 申请公布日期 2000.11.15
申请号 KR19990012032 申请日期 1999.04.07
申请人 SAMSUNG ELECTRONICS CO, LTD. 发明人 WON, JONG SIK
分类号 H01L21/68;(IPC1-7):H01L21/68 主分类号 H01L21/68
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