SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A semiconductor device is provided to increase conductivity of a capacitor electrode, by depositing a titanium layer between a lower electrode and a dielectric layer of a capacitor, by forming a titanium salicide layer and a titanium oxide layer on the respective interfaces, and by forming an upper electrode by an aluminum alloy layer which is a metal interconnection material of a transistor. CONSTITUTION: A lower electrode(13a) of a capacitor is formed on an isolating layer(11) when a gate electrode(13b) of a transistor is formed. A metal layer and a dielectric layer are sequentially formed on the lower electrode. A heat treatment is performed to form a metal salicide layer on an interface between the lower electrode and the metal layer. A heat treatment is performed to form a metal oxide layer on an interface between the metal layer and the dielectric layer. An upper electrode(17) of the capacitor is formed on the dielectric layer by using the same layer as a metal interconnection of the transistor.