METHOD OF FABRICATING CAPACITOR

摘要

PURPOSE: A method for manufacturing a capacitor is provided to prevent dielectric layers deposited in an adjacent protrusion part when a dielectric layer is deposited in a subsequent process, by etching an outer portion of a protrusion part formed on the surface of a rugged lower electrode to sufficiently guarantee a space for depositing the dielectric layer. CONSTITUTION: An insulating layer(2) is deposited on a substrate(1) having a semiconductor device. A contact hole is formed in the insulating layer to expose a specific region of the semiconductor device formed in the substrate. Polycrystalline silicon is deposited on the resultant structure, and patterned to form a rugged lower electrode(3). The lower electrode is cleaned. A dielectric layer is deposited on the rugged lower electrode. Polycrystalline silicon is deposited on the dielectric layer to form an upper electrode. H2O2, a NH4OH mixture solution and an HF solution are used in the cleaning process.