METHOD FOR MANUFACTURING CONTACT OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a contact of a semiconductor device is provided to form a finer cell pad contact, by forming a groove having a spacer in a desired region for the cell pad contact, by forming an opening for the cell pad contact through the groove, and by filling the opening with a conductive material. CONSTITUTION: An interlayer dielectric(112) is formed on a semiconductor substrate(100) having an access transistor. The interlayer dielectric is etched by a predetermined thickness to form a groove of a predetermined depth in a desired position for a contact. After a sidewall insulating layer(120) is formed inside the groove, the interlayer dielectric is completely etched along a pattern of the groove having the sidewall insulating layer to form a contact hole covering a predetermined region of the semiconductor substrate. A fine contact is completed by filling up the contact hole with a conductive layer.