METHOD OF FABRICATING A DRAM MEMORY CELL

摘要

PURPOSE: A method of fabricating a DRAM memory cell is provided to minimize the topology in a memory cell by disposing a bit line in a trench of a substrate so as to be surrounded by a buried and insulation layer. CONSTITUTION: A method of fabricating a DRAM memory cell comprises forming a shallow trench in a semiconductor substrate(101) and forming a field oxide film(107) in the substrate(101). After removing a stack layer on an active region, a silicon oxide film(109a) is formed on an entire surface. A selective tungsten(155) is formed on a recessed portion of the substrate, and a silicon oxide film is formed on an entire surface. The silicon oxide films(109a) are removed by a chemical mechanical polishing method. Contact holes are formed in an interlayer insulation layer(121) and in the interlayer insulation layer(121) and the silicon oxide film, respectively. A bit line connection part(128) is formed via the contact hole so as to connect a bit line(155) to an N+ source/drain region.