发明名称 |
CAPACITOR AND METHOD OF FORMING THE SAME |
摘要 |
PURPOSE: A capacitor is provided to be capable of obtaining higher capacitance under the same area as a conventional capacitor. CONSTITUTION: A capacitor comprises a trench(202a), which is formed in a semiconductor substrate(200) and is filled with an insulation film(202b). A bottom electrode(203) of a capacitor(C) is buried in the insulation film(202b). A first dielectric film(204) is formed on the lower electrode(203), and a middle electrode(205) is formed on the first dielectric film(204). A second dielectric film(206) is formed on the middle electrode(205), and a top electrode(207) is formed on the second dielectric film(206).
|
申请公布号 |
KR20000066725(A) |
申请公布日期 |
2000.11.15 |
申请号 |
KR19990014026 |
申请日期 |
1999.04.20 |
申请人 |
HYUNDAI MICRO ELECTRONICS CO.,LTD. |
发明人 |
OH, BO SEOK |
分类号 |
H01L29/92;H01L27/08;(IPC1-7):H01L29/92 |
主分类号 |
H01L29/92 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|