发明名称 CAPACITOR AND METHOD OF FORMING THE SAME
摘要 PURPOSE: A capacitor is provided to be capable of obtaining higher capacitance under the same area as a conventional capacitor. CONSTITUTION: A capacitor comprises a trench(202a), which is formed in a semiconductor substrate(200) and is filled with an insulation film(202b). A bottom electrode(203) of a capacitor(C) is buried in the insulation film(202b). A first dielectric film(204) is formed on the lower electrode(203), and a middle electrode(205) is formed on the first dielectric film(204). A second dielectric film(206) is formed on the middle electrode(205), and a top electrode(207) is formed on the second dielectric film(206).
申请公布号 KR20000066725(A) 申请公布日期 2000.11.15
申请号 KR19990014026 申请日期 1999.04.20
申请人 HYUNDAI MICRO ELECTRONICS CO.,LTD. 发明人 OH, BO SEOK
分类号 H01L29/92;H01L27/08;(IPC1-7):H01L29/92 主分类号 H01L29/92
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