| 摘要 |
PURPOSE: A floating gate is provided to obtain its large area by maintaining a minimum spacing therebetween and a unimpaired surface during its manufacturing process. CONSTITUTION: A floating gate is manufactured in turn by forming a tunnel oxide film, a polycrystalline silicon film, an interlayer oxide film and silicon nitride in turn at the front surface of a semiconductor substrate with a device separate film in an inactive area, etching the silicon nitride film to form a pattern spaced a plural of the silicon nitride film, etching the interlayer oxide film under a mask of the silicon nitride film pattern to form a pattern of the interlayer oxide film by exposing a surface of the polycrystalline silicon film, forming side wall spacers on side wall of each of the silicon nitride film pattern and interlayer oxide film pattern, forming a masking layer on the surface of the exposed polycrystalline silicon film, removing the side wall spacers and silicon nitride film pattern, and exposing the polycrystalline silicon film by masking the interlayer oxide film and the making layer.
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