METHOD FOR MANUFACTURING DYNAMIC RANDOM ACCESS MEMORY DEVICE

摘要

PURPOSE: A method for manufacturing a dynamic random access memory(DRAM) device is provided to prevent a storage electrode conductive layer from remaining in a frame region, by forming a contact plug. CONSTITUTION: A conductive layer pattern(22) is formed on a semiconductor substrate(21). A first interlayer dielectric(23) is formed on the semiconductor substrate and conductive layer pattern to expose a central portion of the upper surface of the conductive layer pattern. A contact plug(24) is formed on the first interlayer dielectric and conductive layer pattern. The contact plug is polished by a chemical mechanical polishing(CMP) process until the first interlayer dielectric is exposed. A second interlayer dielectric(26), a sacrificial oxidation layer(28) and a storage electrode conductive layer are sequentially formed. The storage electrode conductive layer is eliminated by a CMP process.