SEMICONDUCTOR DEVICE FOR STABILIZING CONTACT RESISTANCE

摘要

PURPOSE: A semiconductor device for stabilizing contact resistance is provided to control resistance in a contact part of a metal interconnection, by additionally forming a barrier metal layer composed of Ti and TiN to effectively form a titanium silicide layer on a titanium layer adjacent to a semiconductor substrate. CONSTITUTION: A semiconductor device for stabilizing contact resistance comprises a semiconductor substrate, a contact hole, a Ti layer, a TiN layer(106) and an additional barrier metal layer(112). The contact hole is formed on the semiconductor substrate(100) by intervening an interlayer dielectric. The Ti layer is stacked on the entire surface of the semiconductor substrate having the contact hole. The TiN layer is formed on the Ti layer. The additional barrier metal layer is formed on the TiN layer.