NON-VOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A non-volatile memory device and a method for manufacturing the same are provided to prevent the growth of an uneven oxide layer between trapping sites and an insulating layer by forming an insulating layer on a peripheral area. CONSTITUTION: A non-volatile memory device comprises a first gate insulating layer and a second gate insulating layer. The first gate insulating layer is used for a memory cell device formed on a cell area. The second gate insulating layer is used for a memory cell drive device formed on a peripheral circuit area. A nitrogen atom is contained in the first and the second gate insulating layers. A method for manufacturing the same comprises the steps of: setting up a substrate(40) as a cell area and a peripheral circuit area; setting up the peripheral circuit area as an area for forming a high voltage transistor and an area for forming a low voltage transistor; forming a first gate insulating layer on the area for forming the high voltage transistor; and forming a second gate insulating layer on the cell area.