| 摘要 |
PROBLEM TO BE SOLVED: To provide an FET structure in which a effects for reducing distortion can further appear sharply, and a chip area can also be reduced. SOLUTION: A multi-finger type GaAs field effect transistor for a high output, in which unit FET are arranged in parallel is provided with a field plate electrode 4 acting on a protecting film between a gate and a drain as a field plate and a connecting part which connects the file plate electrode 4 with a gate bus bar 6. A resistor 7 is serially inserted into the connecting part, and each unit FET is provided with a feedback circuit. The field plate electrode 4 is formed on the protective film at a recess between the gate and the drain.
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