| 摘要 |
A method is provided for fabricating a nonvolatile memory device having a simple stacked stricture with program gates. The method includes forming bitlines of second conductivity type along a first direction separated by a first prescribed distance in a substrate of a first conductivity type and forming first lines on the substrate along a second direction separated from one another by a second prescribed distance. The second direction is substantially perpendicular to the first direction, and the first lines include a first conductive layer on an isolating layer. A gate insulating layer is formed on the substrate and a tunneling insulating layer on the first conductive lines and a second conductive layer is formed on the entire surface. The second conductive layer, the tunneling insulating layer, and the first conductive lines are selectively removed to form second conductive lines along the first direction and program gates. A dielectric film is formed on the second conductive lines and a third conductive layer and an insulating layer are formed on the entire surface. The insulating layer, the third conductive layer, the dielectric film, and the second conductive lines are selectively removed to form word lines in the second direction and floating gates between the first conductive lines. Insulating sidewall spacers are formed on both sides of the patterned insulating layer, the word lines, the dielectric film, and the floating gates and contact holes are formed in the tunneling insulating layer. Then, program lines are formed coupled to the program gates through the contact holes.
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