| 摘要 |
A semiconductor switching device comprises a substrate of silicon of a first conductivity type provided at a first face with a doped region of opposite conductivity type and at a second, opposite face with strips of doped material of the opposite conductivity type therein to form base regions. More highly doped segmented regions of material of the opposite conductivity type lie wholly within the lateral bounds of the strips and are aligned therewith to include in each case a first margin of width on each side towards the boundaries of a strip. Further doped regions, of material of the first conductivity type, separate the segmented regions and include in each case a second margin of width on each side towards the boundaries of a strip. The first and second margins are for metal-insulator-silicon gated channels in the material of the opposite conductivity type between the further regions and the substrate, and the surfaces of the segmented regions and the further regions are provided with a common ohmically connected contact for use as a source terminal.
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