| 摘要 |
In a method of estimating the lifetime of a floating SOI-MOSFET, constants A and B, stress condition dependency Idt(S) of a drain current and stress condition dependency Isub(S) of a substrate current in a body-fixed SOI-MOSFET, and stress condition dependency Idf(S) of a drain current in the floating SOI-MOSFET are obtained from experiment to estimate lifetime tau f(S) from the following equation: where Wf represents a known channel width of the floating SOI-MOSFET.
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