| 摘要 |
PROBLEM TO BE SOLVED: To restrict the occurrence of dishing or erosion which is problematic when forming an embedding metal wiring by a chemical-mechanical polishing(CMP) method. SOLUTION: In this manufacture, when a Cu film 46 is formed in wiring grooves 40 to 44 and is polished by a chemical mechanical polishing to form embedding Cu wirings 46a to 46e, this is made by an abrasive grains free chemical mechanical polishing (CMP in first step) using an abrasive having contents of the abrasive grains of less than 0.5 wt.%, an abrasive grains including chemical mechanical polishing (CMP in second step) using an abrasive having contents of the abrasive grains of 0.5 wt.% or more, and a selective chemical mechanical polishing (CMP in third step) using an abrasive to which anticorrosives such as benzotriazole (BTA), etc., are annexed.
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