| 摘要 |
PROBLEM TO BE SOLVED: To prevent a malfunction of a split gate type EEPROM(Electrically Erasable and Programmable Readout Memory) from being generated and to prolong the life of the EEPROM. SOLUTION: A sidewall spacer 9 is formed on the side surface of a floating gate 7. Therefore, at the time of forming a tunnel oxide film 13, the side surface of the gate 7 is prevented from being oxidized. Even though the spacer 9 itself is oxidized and is retreated (from broken lines to the position being shown by the full line in the diagram), the side surface of the gate 7 itself is protected with the spacer 9. Hereby, the distance between a control gate 12 and the acute part 7a of the gate 7 can be shortened and an FN(Fowler-Nordheim) tunnel current becomes easy to flow. As the result, a malfunction of an EEPROM is prevented from being generated and moreover, the life of the EEPROM is also prolonged.
|
