发明名称 |
PROCEDIMENTO PER L'INCISIONE SUPERFICIALE DI VETRO DI SILICE, ADESEMPIO PER LA REALIZZAZIONE DI MASCHERE DI FASE. |
摘要 |
A layer of electrically conductive material (2) is deposited. on a silica glass substrate (1) with a surface to be etched. A pattern (4) reproducing the etching pattern to be fabricated on the substrate surface is formed on such conductive material (2) through deposition, exposure and development of a resist (3), by leaving uncovered the areas of said conductive material layer (2) corresponding to the areas of the substrate (1) to be etched. As a conductive material, a material such as titanium is chosen, which can be etched by the same etching medium, such as CHF3, used for etching the substrate (1). The removal of said conductive material layer (2) and the etching of the substrate (1) in the areas left uncovered by the resist are then performed in a single step . <IMAGE> |
申请公布号 |
IT1303561(B1) |
申请公布日期 |
2000.11.14 |
申请号 |
IT1998TO00747 |
申请日期 |
1998.09.04 |
申请人 |
CSELT - CENTRO STUDI E LABORATORI T |
发明人 |
ARDITO MARCO;MENEGHINI GIANCARLO |
分类号 |
H01L21/306;C03C15/00;G02B5/18;G03F1/00 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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