DIFFUSION BLOCKING LAYER OF SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A method for manufacturing a diffusion blocking layer of a semiconductor device is provided to prevent impurities from diffusing by the diffusion blocking layer. CONSTITUTION: A lower thin film(30) is formed on an inner wall of a contact hole(20). The lower thin film is plasma-processed. A diffusion blocking layer(40) is formed on the lower thin film. The diffusion blocking layer is formed by a metal organic chemical vapor deposition process in which one of tetra-kisdimethyl amino titanium(TDMAT), tetra-kis diethyl amino titanium(TDEAT), penta dimethyl amino tantalium(PDMAT) and penta diethyl amino tantalium (PDEAT) is used as a source material.