发明名称 |
Radio-frequency variable attenuator |
摘要 |
A variable attenuator comprises bipolar transistors Q1 and Q2 connected in reverse parallel between a point 1 and ground potential G. The base electrodes of the transistors Q1 and Q2 are biased independently by a control circuit 3. The collector of transistor Q1 and the emitter of transistor Q2 are commonly connected to a bias voltage provided by resistor R2 and voltage source Vr. The attenuator provides means by which the linearity, gain, power handling capabilities and noise figure of a front-end receiver can be altered. The attenuator is susceptible to integration in, for example, a radio receiver front-end.
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申请公布号 |
US6147568(A) |
申请公布日期 |
2000.11.14 |
申请号 |
US19990259166 |
申请日期 |
1999.02.26 |
申请人 |
MITEL SEMICONDUCTOR LIMITED |
发明人 |
SOUETINOV, VIATCHESLAV IGOR |
分类号 |
H03H11/24;(IPC1-7):H03H7/24 |
主分类号 |
H03H11/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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