Method for forming metal line of semiconductor device

摘要

A method for forming a metal line of a semiconductor device is suitable for forming a conductive material with strong connection force, by irradiating the region between metals to be connected with each other, with laser beams. It comprises the steps of: forming a plurality of metal lines on a substrate; depositing a first conductive material over the substrate including the metal lines; irradiating the first conductive material between the metal lines to be connected, with laser beams, before forming a second conductive material; and removing the first conductive material excluding the second conductive material.