发明名称 |
Cathode structure for reduced emission and robust handling properties |
摘要 |
A photocathode device for use in an image intensifier, fabricated with a photoemissive semiconductor wafer having an active cathode layer which includes a central region of a first predetermined height surrounded by a peripheral region of a second predetermined height. The first predetermined height of the central region is configured to be greater than the second predetermined height of the peripheral region in order to create a recessed contact structure which is less likely to have unwanted emission points. A layer of conductive material covers the peripheral region to provide an electrical contact to the photocathode device. A layer of insulating material covers the layer of conductive material in order to protect the contact layer from being damage during handling operations.
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申请公布号 |
US6146229(A) |
申请公布日期 |
2000.11.14 |
申请号 |
US19980080424 |
申请日期 |
1998.05.18 |
申请人 |
ITT INDUSTRIES, INC. |
发明人 |
SMITH, ARLYNN W.;VRESCAK, WARREN DAVID |
分类号 |
H01J1/34;H01J9/12;(IPC1-7):H01J9/02 |
主分类号 |
H01J1/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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