SEMICONDUCTOR DEVICE, MANUFACTURE THEREOF, AND FORMATION OF CONTACT IN SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device which has a stable contact resistance and also has an aligned maximum allowable contact region adapted to reduced fundamental dimensions. SOLUTION: A borderless contact 11 of giga-scale fundamental dimensions is spread in a direction perpendicular to word lines 14 (in a direction parallel to bit lines 16). Formation of a borderless contact structure of another square into a rectangular structure causes reduction of a step positional deviation, thus decreasing a contact resistance and keeping its uniformity. A maximum allowable contact region can be obtained even with a positionally shifted arrangement.