发明名称 CERAMIC GAS SUPPLYING STRUCTURE FOR SEMICONDUCTOR MANUFACTURING APPARATUS
摘要 PROBLEM TO BE SOLVED: To suppress arcing by stabilizing a gas supply state over a wide range and preventing unevenness of gas flow in a ceramic gas supplying structure for supplying gas in a semiconductor manufacturing apparatus. SOLUTION: This ceramic gas supplying structure comprises a ceramic plate- like base 22 having a supply surface 22a for supplying gas and a back surface 22b. The base 22 has a thin portion 23. An air gap part 10 is formed between the portion 23 and the surface 22b. A plurality of gas supply holes 14 for supplying gas to the surface 22a side are provided at the portion 23. One openings 14a of the holes 14 are provided at the surface 22a, and another openings of the respective supply holes are faces the gap part 10.
申请公布号 JP2000315680(A) 申请公布日期 2000.11.14
申请号 JP19990124959 申请日期 1999.04.30
申请人 NGK INSULATORS LTD 发明人 NISHIO AKIFUMI;HORI MASAHIRO;YAMADA NAOHITO
分类号 H01L21/302;C23C16/44;C23C16/455;F17D1/04;H01L21/00;H01L21/205;H01L21/3065;(IPC1-7):H01L21/306 主分类号 H01L21/302
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